ece639

Course: ECE 639
Professor: Dr. Andrei Sazonov
Term: Fall 2002

Laser crystallization of polysilicon is the primary method used for create poly-Si films at low-temperature. The motivation for poly-Si devices is to reduce packaging constraints for AM-LCD and large-area imaging arrays, by using high-speed poly-Si driver circuitry on the LCD panel. Methods of conduction in poly-Si are discussed, as well as growth mechanisms of poly-Si from the liquid Si melt. Some current research is demonstrated, and the methods to increase uniformity and grain size are shown.