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Bottom-Gate TFTs With Channel Layer Deposited by Pulsed PECVD

MASc Thesis
Supervisor: Arokia Nathan and Czang-Ho Lee
Date: October, 2004

Nanocrystalline silicon (nc-Si:H) is a promising material for Thin-Film Transistors (TFTs) offering potentially higher mobilities and improved stability over hydrogenated amorphous silicon (a-Si:H). The slow growth rate of nc-Si:H can be overcome by using pulsed Plasma-Enhanced Chemical Vapour Deposition (PECVD). Pulsed PECVD also reduces powder particle formation in the plasma and provides added degrees of freedom for process optimization. Unlike high frequency PECVD, pulsed PECVD can be scaled to deposit films ov

Electron Beam Lithography: Past and Present

Course: ECE 730-10
Professor: Dr. Siva Sivoththaman
Term: Spring 2003

As optical UV lithography reaches its limits of 100 nm, next-generation lithography tools will be needed. Electron Beam Lithography (EBL) is a strong candidate and has the capability to reach resolutions of up to 10-20 nm. EBL systems have a long history yet are only starting to receive attention in the past ten years, much of which is focused on improving their throughput in order to make EBL systems suitable for mass production type work. The electron optics compoents which make up and EBL system, the resists, the resolution-limiting effects and various systems are discussed.

Physics and Modelling of Nanocrystalline Thin-Film Transistors

Course: ECE 730-11
Professor: Dr. John Hamel
Term: Winter 2003

Nanocrystalline silicon (nc-Si) is an attractive material for use in thin-film transistors (TFTs). Although it does not have nearly the same mobility as polycrystalline silicon, it is much easier to fabricate, as it can be deposited by PECVD even at ultra-low temperatures (<300oC). The advantages of nc-Si include higher mobility and increased stability compared to amorphous silicon. It often has higher leakage currents, however. The transport in nc-Si is still not well understood, although there is plenty of literature available on the suject.

4-bit CMOS Transmission Gate Conditional Carry Select Adder

Course: ECE 637
Professor: Dr. Elmasry
Term: Winter 2003

Laser Crystallization for Low-Temperature Polysilicon Thin Films

Course: ECE 639
Professor: Dr. Andrei Sazonov
Term: Fall 2002

Laser crystallization of polysilicon is the primary method used for create poly-Si films at low-temperature. The motivation for poly-Si devices is to reduce packaging constraints for AM-LCD and large-area imaging arrays, by using high-speed poly-Si driver circuitry on the LCD panel. Methods of conduction in poly-Si are discussed, as well as growth mechanisms of poly-Si from the liquid Si melt. Some current research is demonstrated, and the methods to increase uniformity and grain size are shown.

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