TFT

Physics and Modelling of Nanocrystalline Thin-Film Transistors

Course: ECE 730-11
Professor: Dr. John Hamel
Term: Winter 2003

Nanocrystalline silicon (nc-Si) is an attractive material for use in thin-film transistors (TFTs). Although it does not have nearly the same mobility as polycrystalline silicon, it is much easier to fabricate, as it can be deposited by PECVD even at ultra-low temperatures (<300oC). The advantages of nc-Si include higher mobility and increased stability compared to amorphous silicon. It often has higher leakage currents, however. The transport in nc-Si is still not well understood, although there is plenty of literature available on the suject.

Laser Crystallization for Low-Temperature Polysilicon Thin Films

Course: ECE 639
Professor: Dr. Andrei Sazonov
Term: Fall 2002

Laser crystallization of polysilicon is the primary method used for create poly-Si films at low-temperature. The motivation for poly-Si devices is to reduce packaging constraints for AM-LCD and large-area imaging arrays, by using high-speed poly-Si driver circuitry on the LCD panel. Methods of conduction in poly-Si are discussed, as well as growth mechanisms of poly-Si from the liquid Si melt. Some current research is demonstrated, and the methods to increase uniformity and grain size are shown.

An X-Ray Pixel Sensor for Large-Area Imaging in VHDL-AMS

Class: ECE 741
Professor: Dr. Jim Barby
Year: Fall 2002

An X-Ray pixel sensor is modelled using the VHDL-AMS mixed-signal modelling language. The components of the model include: the x-ray source, a selenium detection layer and charging capacitor, and the switching and amplifying TFTs. A passive pixel and active pixel configuration are both investigated.

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