Physics and Modelling of Nanocrystalline Thin-Film Transistors

Course: ECE 730-11
Professor: Dr. John Hamel
Term: Winter 2003

Nanocrystalline silicon (nc-Si) is an attractive material for use in thin-film transistors (TFTs). Although it does not have nearly the same mobility as polycrystalline silicon, it is much easier to fabricate, as it can be deposited by PECVD even at ultra-low temperatures (<300oC). The advantages of nc-Si include higher mobility and increased stability compared to amorphous silicon. It often has higher leakage currents, however. The transport in nc-Si is still not well understood, although there is plenty of literature available on the suject. This reports comprises a literature review of transport and modelling of nc-Si TFTs.

PDF icon 730project_Modelling_nc-Si.pdf513.57 KB

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