Electron Beam Lithography: Past and Present

Course: ECE 730-10
Professor: Dr. Siva Sivoththaman
Term: Spring 2003

As optical UV lithography reaches its limits of 100 nm, next-generation lithography tools will be needed. Electron Beam Lithography (EBL) is a strong candidate and has the capability to reach resolutions of up to 10-20 nm. EBL systems have a long history yet are only starting to receive attention in the past ten years, much of which is focused on improving their throughput in order to make EBL systems suitable for mass production type work. The electron optics compoents which make up and EBL system, the resists, the resolution-limiting effects and various systems are discussed.

Physics and Modelling of Nanocrystalline Thin-Film Transistors

Course: ECE 730-11
Professor: Dr. John Hamel
Term: Winter 2003

Nanocrystalline silicon (nc-Si) is an attractive material for use in thin-film transistors (TFTs). Although it does not have nearly the same mobility as polycrystalline silicon, it is much easier to fabricate, as it can be deposited by PECVD even at ultra-low temperatures (<300oC). The advantages of nc-Si include higher mobility and increased stability compared to amorphous silicon. It often has higher leakage currents, however. The transport in nc-Si is still not well understood, although there is plenty of literature available on the suject.

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