nanocrystalline silicon

Bottom-Gate TFTs With Channel Layer Deposited by Pulsed PECVD

MASc Thesis
Supervisor: Arokia Nathan and Czang-Ho Lee
Date: October, 2004

Nanocrystalline silicon (nc-Si:H) is a promising material for Thin-Film Transistors (TFTs) offering potentially higher mobilities and improved stability over hydrogenated amorphous silicon (a-Si:H). The slow growth rate of nc-Si:H can be overcome by using pulsed Plasma-Enhanced Chemical Vapour Deposition (PECVD). Pulsed PECVD also reduces powder particle formation in the plasma and provides added degrees of freedom for process optimization. Unlike high frequency PECVD, pulsed PECVD can be scaled to deposit films ov

Physics and Modelling of Nanocrystalline Thin-Film Transistors

Course: ECE 730-11
Professor: Dr. John Hamel
Term: Winter 2003

Nanocrystalline silicon (nc-Si) is an attractive material for use in thin-film transistors (TFTs). Although it does not have nearly the same mobility as polycrystalline silicon, it is much easier to fabricate, as it can be deposited by PECVD even at ultra-low temperatures (<300oC). The advantages of nc-Si include higher mobility and increased stability compared to amorphous silicon. It often has higher leakage currents, however. The transport in nc-Si is still not well understood, although there is plenty of literature available on the suject.

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